KSB1151YS
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
POWER BIPOLAR TRANSISTOR, 5A, 60
POWER BIPOLAR TRANSISTOR, 5A, 60
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Description
Description
The KSB1151YS is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.3 W, this transistor is housed in a TO-126-3 through-hole package, ensuring ease of integration into electronic circuits. Its robust design allows for reliable operation in demanding environments, making it ideal for power management solutions.
The KSB1151YS is a high-performance PNP bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 60 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.3 W, this transistor is housed in a TO-126-3 through-hole package, ensuring ease of integration into electronic circuits. Its robust design allows for reliable operation in demanding environments, making it ideal for power management solutions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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