K857PE
Manufacturer
VISHAY
Data sheet
Data sheet
Specification
Specification
SENSOR PHOTODIODE 840NM 6VDFN
SENSOR PHOTODIODE 840NM 6VDFN
Detailed specification
Detailed specification
Photodiode 840nm 30ns 120° 6-VDFN Exposed Pad
Photodiode 840nm 30ns 120° 6-VDFN Exposed Pad
Description
Description
The K857PE is a 4-quadrant silicon PIN photodiode designed for high sensitivity applications. It operates at a peak wavelength of 840 nm with a rise and fall time of 30 ns. The device features a surface-mounted 6-VDFN package with an active area of 1.6 mm² per quadrant, making it suitable for compact designs. It supports a reverse voltage of up to 20 V and operates within a temperature range of -40 to +110 °C.
The K857PE is a 4-quadrant silicon PIN photodiode designed for high sensitivity applications. It operates at a peak wavelength of 840 nm with a rise and fall time of 30 ns. The device features a surface-mounted 6-VDFN package with an active area of 1.6 mm² per quadrant, making it suitable for compact designs. It supports a reverse voltage of up to 20 V and operates within a temperature range of -40 to +110 °C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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