ISL9V2040D3ST
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
IGBT 430V 10A TO252AA
IGBT 430V 10A TO252AA
Detailed specification
Detailed specification
IGBT 430 V 10 A 130 W Surface Mount TO-252AA
IGBT 430 V 10 A 130 W Surface Mount TO-252AA
Description
Description
The ISL9V2040D3ST from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. With a voltage rating of 430V and a current rating of 10A, this device can handle a maximum power dissipation of 130W. It is housed in a TO-252AA package, which is suitable for surface mount technology, ensuring a compact footprint and ease of integration into various electronic circuits. This IGBT is ideal for use in motor drives, power inverters, and other high-voltage applications.
The ISL9V2040D3ST from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. With a voltage rating of 430V and a current rating of 10A, this device can handle a maximum power dissipation of 130W. It is housed in a TO-252AA package, which is suitable for surface mount technology, ensuring a compact footprint and ease of integration into various electronic circuits. This IGBT is ideal for use in motor drives, power inverters, and other high-voltage applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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