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ISL9V2040D3ST

Manufacturer

FAIRCHILD SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
ISL9V2040D3ST is used in high-efficiency power switching applications such as motor drives, power inverters, and high-power electronic systems. Its design allows for effective control and minimal power loss, making it suitable for energy-efficient solutions in industrial and consumer electronics.
Specification
Specification
INSULATED GATE BIPOLAR TRANSISTO
INSULATED GATE BIPOLAR TRANSISTO
Detailed specification
Detailed specification
IGBT. The device features a surface-mounted design with a thickness of 1.5 mm (0.059 in) and a width of 10 mm (0.394 in). It is equipped with RDS(on) characteristics and can handle a power rating of up to 100 W. The core is designed with a trumformad kärna for enhanced performance, and the resistors are made using tjockfilmsmotstånd technology. The winding is trådlindad to ensure optimal efficiency.
IGBT. The device features a surface-mounted design with a thickness of 1.5 mm (0.059 in) and a width of 10 mm (0.394 in). It is equipped with RDS(on) characteristics and can handle a power rating of up to 100 W. The core is designed with a trumformad kärna for enhanced performance, and the resistors are made using tjockfilmsmotstånd technology. The winding is trådlindad to ensure optimal efficiency.
Description
Description
The ISL9V2040D3ST from Fairchild Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device combines the easy control of a MOSFET with the high-current and low-saturation voltage capabilities of a bipolar transistor. It is suitable for use in various applications, including motor drives, power inverters, and other high-power electronic systems. The IGBT features low RDS(on) characteristics, ensuring minimal power loss during operation, making it ideal for energy-efficient designs.
The ISL9V2040D3ST from Fairchild Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device combines the easy control of a MOSFET with the high-current and low-saturation voltage capabilities of a bipolar transistor. It is suitable for use in various applications, including motor drives, power inverters, and other high-power electronic systems. The IGBT features low RDS(on) characteristics, ensuring minimal power loss during operation, making it ideal for energy-efficient designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
ISL9V2040D3ST is also available from the following manufacturers
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