IRF9510SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 100V 4A D2PAK
MOSFET P-CH 100V 4A D2PAK
Detailed specification
Detailed specification
P-Channel 100 V 4A (Tc) 43W (Tc) Surface Mount
P-Channel 100 V 4A (Tc) 43W (Tc) Surface Mount
Description
Description
The IRF9510SPBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDS) of -100V and a continuous Drain Current (ID) of -4A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W. With a low on-state resistance (RDS(on)) of 1.2Ω at VGS = -10V, it ensures efficient power management in various electronic circuits.
The IRF9510SPBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDS) of -100V and a continuous Drain Current (ID) of -4A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W. With a low on-state resistance (RDS(on)) of 1.2Ω at VGS = -10V, it ensures efficient power management in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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