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IRF9510SPBF

Manufacturer

SILICONIX

data-sheet
Data sheet
Data sheet
IRF9510SPBF is suitable for industrial and automotive applications, particularly in power management systems where high efficiency and reliability are critical. Its robust design allows for operation at elevated temperatures up to 175°C, making it ideal for demanding environments. The device's fast switching capabilities and low on-resistance enhance performance in power conversion and control circuits.
Specification
Specification
MOSFET P-CH 100V 4A D2PAK
MOSFET P-CH 100V 4A D2PAK
Detailed specification
Detailed specification
P-Channel 100 V 4A (Tc) 43W (Tc) Surface Mount
P-Channel 100 V 4A (Tc) 43W (Tc) Surface Mount
Description
Description
The IRF9510SPBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDS) of -100V and a continuous Drain Current (ID) of -4A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W. With a low on-state resistance (RDS(on)) of 1.2Ω at VGS = -10V, it ensures efficient power management in various electronic circuits.
The IRF9510SPBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDS) of -100V and a continuous Drain Current (ID) of -4A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W. With a low on-state resistance (RDS(on)) of 1.2Ω at VGS = -10V, it ensures efficient power management in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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