IRF610STRLPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 3.3A D2PAK
MOSFET N-CH 200V 3.3A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF610STRLPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, and is designed for fast switching and ease of paralleling.
The IRF610STRLPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, and is designed for fast switching and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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