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HUF75631S3ST

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
HUF75631S3ST is designed for use in industrial and automotive applications, particularly in power management and switching circuits where high efficiency and low on-state resistance are critical. Its robust specifications make it suitable for various power supply designs and motor control systems.
Specification
Specification
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
Detailed specification
Detailed specification
N-Channel 100 V 33A (Tc) 120W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 100 V 33A (Tc) 120W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The HUF75631S3ST is an N-Channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. It features an ultra-low on-resistance (RDS(on)) of 0.040Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK package and has a power dissipation capability of 120W.
The HUF75631S3ST is an N-Channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. It features an ultra-low on-resistance (RDS(on)) of 0.040Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK package and has a power dissipation capability of 120W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
HUF75631S3ST is also available from the following manufacturers
FAIRCHILD SEMICONDUCTOR
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Gustaf Eriksson031-338 96 65gustaf.eriksson@westcomp.se
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Nicklas Johansson031-338 96 93nicklas.johansson@westcomp.se
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Patrick Wiström031-338 96 64patrick.wistrom@westcomp.se
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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