HUF75631S3ST
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
Detailed specification
Detailed specification
N-Channel 100 V 33A (Tc) 120W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 100 V 33A (Tc) 120W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The HUF75631S3ST is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. This device can handle a power dissipation of up to 120W (Tc), making it suitable for demanding power management tasks. Packaged in a D2PAK (TO-263) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs in various electronic circuits.
The HUF75631S3ST is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. This device can handle a power dissipation of up to 120W (Tc), making it suitable for demanding power management tasks. Packaged in a D2PAK (TO-263) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C