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HN1B01FDW1T1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
HN1B01FDW1T1G is designed for general-purpose amplification in various applications, including automotive, industrial, and consumer electronics. Its high voltage and current ratings, along with its complementary configuration, make it ideal for signal processing and switching applications.
Specification
Specification
TRANS NPN/PNP 50V 0.2A SC74
TRANS NPN/PNP 50V 0.2A SC74
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 200mA 380mW surface-mounted SC-74
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 200mA 380mW surface-mounted SC-74
Description
Description
The HN1B01FDW1T1G is a complementary dual bipolar transistor array featuring 1 NPN and 1 PNP transistor in a surface-mounted SC-74 package. It supports a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 200mA, and a power dissipation of 380mW. The device exhibits high DC current gain (hFE) ranging from 200 to 400, making it suitable for general-purpose amplification applications.
The HN1B01FDW1T1G is a complementary dual bipolar transistor array featuring 1 NPN and 1 PNP transistor in a surface-mounted SC-74 package. It supports a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 200mA, and a power dissipation of 380mW. The device exhibits high DC current gain (hFE) ranging from 200 to 400, making it suitable for general-purpose amplification applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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HN1B01FDW1T1G is also available from the following manufacturers
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