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HN1B01FDW1T1G

Manufacturer

FAIRCHILD SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
HN1B01FDW1T1G is used in low-power signal amplification and switching applications. Typical applications include audio signal processing, low-frequency amplification, and general-purpose switching in consumer electronics and communication devices.
Specification
Specification
SMALL SIGNAL BIPOLAR TRANSISTOR,
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 200mA 380mW surface-mounted SC-74
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 200mA 380mW surface-mounted SC-74
Description
Description
The HN1B01FDW1T1G is a small signal bipolar transistor array from Fairchild Semiconductor, featuring one NPN and one PNP transistor. This device is designed for low-power applications, with a maximum collector-emitter voltage of 50V and a collector current rating of 200mA. It has a power dissipation capability of 380mW, making it suitable for various signal amplification and switching tasks. The SC-74 surface mount package allows for efficient PCB space utilization, ideal for compact electronic designs.
The HN1B01FDW1T1G is a small signal bipolar transistor array from Fairchild Semiconductor, featuring one NPN and one PNP transistor. This device is designed for low-power applications, with a maximum collector-emitter voltage of 50V and a collector current rating of 200mA. It has a power dissipation capability of 380mW, making it suitable for various signal amplification and switching tasks. The SC-74 surface mount package allows for efficient PCB space utilization, ideal for compact electronic designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
HN1B01FDW1T1G is also available from the following manufacturers
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