GT20N135SRA,S1E(S
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - GT20N135SRA,S1E(S - IGBT, 40 A, 2 V, 312 W, 1.35 kV, TO-247, 3 Pins
TOSHIBA - GT20N135SRA,S1E(S - IGBT, 40 A, 2 V, 312 W, 1.35 kV, TO-247, 3 Pins
Description
Description
The TOSHIBA GT20N135SRA,S1E(S is a 1.35 kV N-Channel IGBT designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.60 V (typ.) at IC = 20 A, a maximum collector current of 40 A, and a power dissipation of 312 W. The device is housed in a TO-247 package.
The TOSHIBA GT20N135SRA,S1E(S is a 1.35 kV N-Channel IGBT designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.60 V (typ.) at IC = 20 A, a maximum collector current of 40 A, and a power dissipation of 312 W. The device is housed in a TO-247 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C