FQP27P06
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 60V 27A TO220-3
MOSFET P-CH 60V 27A TO220-3
Detailed specification
Detailed specification
P-Channel 60 V 27A (Tc) 120W (Tc) Through Hole TO-220-3
P-Channel 60 V 27A (Tc) 120W (Tc) Through Hole TO-220-3
Description
Description
The FQP27P06 is a P-Channel enhancement mode power MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDSS) of -60 V, a continuous Drain Current (ID) of -27 A, and an on-state resistance (RDS(on)) of 70 mΩ at VGS = -10 V. With a power dissipation capability of 120 W and a maximum junction temperature of 175°C, it is suitable for switched mode power supplies, audio amplifiers, and DC motor control.
The FQP27P06 is a P-Channel enhancement mode power MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDSS) of -60 V, a continuous Drain Current (ID) of -27 A, and an on-state resistance (RDS(on)) of 70 mΩ at VGS = -10 V. With a power dissipation capability of 120 W and a maximum junction temperature of 175°C, it is suitable for switched mode power supplies, audio amplifiers, and DC motor control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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