FQD19N10LTM
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 15.6A DPAK
MOSFET N-CH 100V 15.6A DPAK
Detailed specification
Detailed specification
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Description
Description
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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