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FQD19N10LTM

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FQD19N10LTM is designed for use in industrial applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. Its advanced MOSFET technology ensures high efficiency and reliability in demanding environments.
Specification
Specification
MOSFET N-CH 100V 15.6A DPAK
MOSFET N-CH 100V 15.6A DPAK
Detailed specification
Detailed specification
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Description
Description
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FQD19N10LTM is also available from the following manufacturers
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