FQD19N10LTM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 15.6A DPAK
MOSFET N-CH 100V 15.6A DPAK
Detailed specification
Detailed specification
N-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) surface-mounted TO-252AA
N-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) surface-mounted TO-252AA
Description
Description
The FQD19N10LTM from onsemi is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 15.6A at a case temperature (Tc). The device can handle a power dissipation of 2.5W at ambient temperature (Ta) and up to 50W at Tc, making it suitable for demanding power management tasks. Packaged in a DPAK (TO-252AA) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs.
The FQD19N10LTM from onsemi is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 15.6A at a case temperature (Tc). The device can handle a power dissipation of 2.5W at ambient temperature (Ta) and up to 50W at Tc, making it suitable for demanding power management tasks. Packaged in a DPAK (TO-252AA) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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