FP50R12KE3BOSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
IGBT MOD 1200V 75A 280W
IGBT MOD 1200V 75A 280W
Detailed specification
Detailed specification
IGBT Module NPT Single 1200 V 75 A 280 W Chassis Mount Module
IGBT Module NPT Single 1200 V 75 A 280 W Chassis Mount Module
Description
Description
The FP50R12KE3BOSA1 is a 1200V, 75A, 280W IGBT module designed for chassis mounting. It features a non-punch-through (NPT) design, with a maximum collector-emitter voltage of 1200V and a continuous DC collector current of 75A at 25°C. The module supports a gate-emitter peak voltage of ±20V and has a total power dissipation of 280W. It is suitable for high-efficiency inverter applications.
The FP50R12KE3BOSA1 is a 1200V, 75A, 280W IGBT module designed for chassis mounting. It features a non-punch-through (NPT) design, with a maximum collector-emitter voltage of 1200V and a continuous DC collector current of 75A at 25°C. The module supports a gate-emitter peak voltage of ±20V and has a total power dissipation of 280W. It is suitable for high-efficiency inverter applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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