FDS4435BZ
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Specification
Specification
MOSFET P-CH 30V 8.8A 8SOIC
MOSFET P-CH 30V 8.8A 8SOIC
Detailed specification
Detailed specification
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Description
Description
The FDS4435BZ is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A, making it suitable for various power management tasks. Packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format, this MOSFET offers low on-resistance, ensuring minimal power loss during operation. Its compact size and robust performance make it ideal for use in consumer electronics, automotive applications, and power supply circuits.
The FDS4435BZ is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A, making it suitable for various power management tasks. Packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format, this MOSFET offers low on-resistance, ensuring minimal power loss during operation. Its compact size and robust performance make it ideal for use in consumer electronics, automotive applications, and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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