FDS4435BZ
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 8.8A 8SOIC
MOSFET P-CH 30V 8.8A 8SOIC
Detailed specification
Detailed specification
P-Channel 30 V 8.8A (Ta) 2.5W (Ta) surface-mounted 8-SOIC
P-Channel 30 V 8.8A (Ta) 2.5W (Ta) surface-mounted 8-SOIC
Description
Description
The FDS4435BZ from onsemi is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A at ambient temperature (Ta). This device is housed in an 8-SOIC package, allowing for surface mount installation, which is ideal for space-constrained designs. With a power dissipation capability of 2.5W at Ta, it is suitable for various applications requiring reliable performance in power management and signal switching.
The FDS4435BZ from onsemi is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A at ambient temperature (Ta). This device is housed in an 8-SOIC package, allowing for surface mount installation, which is ideal for space-constrained designs. With a power dissipation capability of 2.5W at Ta, it is suitable for various applications requiring reliable performance in power management and signal switching.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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