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FDP036N10A

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDP036N10A is suitable for industrial applications such as synchronous rectification in ATX and server power supplies, battery protection circuits, motor drives, and micro solar inverters. Its high power handling and low on-state resistance make it ideal for efficient power management in demanding environments.
Specification
Specification
MOSFET N-CH 100V 120A TO220
MOSFET N-CH 100V 120A TO220
Detailed specification
Detailed specification
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Description
Description
The FDP036N10A is a high-performance N-Channel MOSFET designed for applications requiring fast switching speeds and low on-state resistance. With a maximum drain-source voltage of 100V and a continuous drain current of 120A, it features a low RDS(on) of 3.6 mΩ at VGS = 10V, making it ideal for synchronous rectification, battery protection circuits, and motor drives.
The FDP036N10A is a high-performance N-Channel MOSFET designed for applications requiring fast switching speeds and low on-state resistance. With a maximum drain-source voltage of 100V and a continuous drain current of 120A, it features a low RDS(on) of 3.6 mΩ at VGS = 10V, making it ideal for synchronous rectification, battery protection circuits, and motor drives.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDP036N10A is also available from the following manufacturers
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