FDP036N10A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 120A TO220-3
MOSFET N-CH 100V 120A TO220-3
Detailed specification
Detailed specification
N-Channel 100 V 120A (Tc) 333W (Tc) Through Hole TO-220-3
N-Channel 100 V 120A (Tc) 333W (Tc) Through Hole TO-220-3
Description
Description
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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