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FDP036N10A

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDP036N10A is suitable for industrial applications such as synchronous rectification in ATX and server power supplies, battery protection circuits, motor drives, and micro solar inverters. Its high current handling and low on-state resistance make it ideal for power management solutions.
Specification
Specification
MOSFET N-CH 100V 120A TO220-3
MOSFET N-CH 100V 120A TO220-3
Detailed specification
Detailed specification
N-Channel 100 V 120A (Tc) 333W (Tc) Through Hole TO-220-3
N-Channel 100 V 120A (Tc) 333W (Tc) Through Hole TO-220-3
Description
Description
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDP036N10A is also available from the following manufacturers
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