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FDN359BN

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN359BN is suitable for low voltage and battery-powered applications, particularly in industrial and consumer electronics domains. Its low on-state resistance and fast switching capabilities make it ideal for power management, motor control, and signal switching applications.
Specification
Specification
MOSFET N-CH 30V 2.7A SOT23
MOSFET N-CH 30V 2.7A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN359BN is an N-Channel Logic Level MOSFET with a maximum Drain-Source Voltage of 30V and a continuous Drain Current of 2.7A. It features low on-state resistance (RDS(on)) of 46mΩ at VGS = 10V and 60mΩ at VGS = 4.5V, making it ideal for low voltage and battery-powered applications requiring efficient switching performance.
The FDN359BN is an N-Channel Logic Level MOSFET with a maximum Drain-Source Voltage of 30V and a continuous Drain Current of 2.7A. It features low on-state resistance (RDS(on)) of 46mΩ at VGS = 10V and 60mΩ at VGS = 4.5V, making it ideal for low voltage and battery-powered applications requiring efficient switching performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN359BN is also available from the following manufacturers
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