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FDN359BN

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN359BN is suitable for industrial and consumer electronics applications, particularly in low voltage and battery-powered systems where efficient power management and fast switching capabilities are essential.
Specification
Specification
MOSFET N-CH 30V 2.7A SUPERSOT3
MOSFET N-CH 30V 2.7A SUPERSOT3
Detailed specification
Detailed specification
N-Channel 30 V 2.7A (Ta) 500mW (Ta) surface-mounted SOT-23-3
N-Channel 30 V 2.7A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN359BN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V, continuous drain current of 2.7A, and a low on-state resistance (RDS(on)) of 0.046 Ω at VGS = 10V. The device is housed in a SOT-23-3 package, ensuring fast switching and low power loss.
The FDN359BN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V, continuous drain current of 2.7A, and a low on-state resistance (RDS(on)) of 0.046 Ω at VGS = 10V. The device is housed in a SOT-23-3 package, ensuring fast switching and low power loss.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN359BN is also available from the following manufacturers
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