FDN359AN
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 30V 2.7A SOT23
MOSFET N-CH 30V 2.7A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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