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FDN359AN

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN359AN is suitable for low voltage and battery-powered applications, including consumer electronics, power management, and switching circuits. Its advanced PowerTrench process minimizes power loss and enhances switching performance, making it ideal for applications requiring efficient energy use.
Specification
Specification
MOSFET N-CH 30V 2.7A SOT23
MOSFET N-CH 30V 2.7A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN359AN is also available from the following manufacturers
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