FDN359AN
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 30V 2.7A SUPERSOT3
MOSFET N-CH 30V 2.7A SUPERSOT3
Detailed specification
Detailed specification
N-Channel 30 V 2.7A (Ta) 500mW (Ta) surface-mounted SOT-23-3
N-Channel 30 V 2.7A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN359AN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.7A. With a low on-state resistance (RDS(ON)) of 0.046 Ω at VGS = 10V, it ensures minimal power loss and fast switching capabilities, making it ideal for efficient power management in compact designs.
The FDN359AN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.7A. With a low on-state resistance (RDS(ON)) of 0.046 Ω at VGS = 10V, it ensures minimal power loss and fast switching capabilities, making it ideal for efficient power management in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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