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FDN358P

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN358P is ideal for portable electronics applications, including load switching, power management, battery charging circuits, and DC/DC conversion. Its high performance trench technology and low on-state resistance enhance efficiency in various electronic devices.
Specification
Specification
MOSFET P-CH 30V 1.5A SOT23
MOSFET P-CH 30V 1.5A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN358P is a P-channel MOSFET designed for portable electronics applications, featuring a maximum drain-source voltage of -30V and continuous drain current of -1.5A. It offers low on-state resistance (RDS(ON)) of 90mΩ at VGS = -10V, and a low gate charge of 4 nC, making it suitable for load switching, power management, and battery charging circuits.
The FDN358P is a P-channel MOSFET designed for portable electronics applications, featuring a maximum drain-source voltage of -30V and continuous drain current of -1.5A. It offers low on-state resistance (RDS(ON)) of 90mΩ at VGS = -10V, and a low gate charge of 4 nC, making it suitable for load switching, power management, and battery charging circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN358P is also available from the following manufacturers
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