FDN358P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 1.5A SUPERSOT3
MOSFET P-CH 30V 1.5A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 30 V 1.5A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 30 V 1.5A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN358P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 1.5A at ambient temperature (Ta). The device is housed in a compact Surface Mount SOT-23-3 package, allowing for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), this MOSFET is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
The FDN358P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 1.5A at ambient temperature (Ta). The device is housed in a compact Surface Mount SOT-23-3 package, allowing for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), this MOSFET is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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