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FDN336P

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN336P is ideal for portable electronics applications, including load switching, power management, battery charging circuits, and DC/DC conversion. Its low on-state resistance and gate charge make it suitable for efficient power management in consumer electronics and telecommunications.
Specification
Specification
MOSFET P-CH 20V 1.3A SOT23
MOSFET P-CH 20V 1.3A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN336P is a P-Channel MOSFET designed for 2.5V applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -1.3A. It offers low on-state resistance (RDS(ON)) of 91mΩ at VGS = -4.5V, ensuring efficient power management and load switching in portable electronics. Its compact SOT-23 package enhances integration in space-constrained designs.
The FDN336P is a P-Channel MOSFET designed for 2.5V applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -1.3A. It offers low on-state resistance (RDS(ON)) of 91mΩ at VGS = -4.5V, ensuring efficient power management and load switching in portable electronics. Its compact SOT-23 package enhances integration in space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN336P is also available from the following manufacturers
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