FDN336P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 20V 1.3A SUPERSOT3
MOSFET P-CH 20V 1.3A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 20 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 20 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN336P is a P-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of -20V and a continuous drain current of -1.3A. It utilizes onsemi's POWERTRENCH technology for low RDS(on) of 0.20Ω at VGS = -4.5V, ensuring efficient power management in compact surface-mounted designs.
The FDN336P is a P-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of -20V and a continuous drain current of -1.3A. It utilizes onsemi's POWERTRENCH technology for low RDS(on) of 0.20Ω at VGS = -4.5V, ensuring efficient power management in compact surface-mounted designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
FDN336P is also available from the following manufacturersContact sales
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