FDN306P
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 12V 2.6A SOT23
MOSFET P-CH 12V 2.6A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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