logo

FDN306P

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN306P is designed for battery management, load switching, and battery protection applications in consumer electronics and industrial domains. Its low on-state resistance and fast switching capabilities make it ideal for efficient power management in portable devices and energy-sensitive applications.
Specification
Specification
MOSFET P-CH 12V 2.6A SOT23
MOSFET P-CH 12V 2.6A SOT23
Detailed specification
Detailed specification
-
-
Description
Description
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
FDN306P is also available from the following manufacturers
Contact sales
Contact Marcus or one of our other skilled sales representatives. They'll help you find the right service option.
Marcus Gustafsson
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.