FDN306P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 12V 2.6A SUPERSOT3
MOSFET P-CH 12V 2.6A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 12 V 2.6A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 12 V 2.6A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN306P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 12V and can handle a continuous drain current of 2.6A at a temperature of 25°C. This device features a power dissipation capability of 500mW, making it suitable for compact designs. Packaged in a surface-mounted SOT-23-3 configuration, the FDN306P is ideal for space-constrained applications where performance and reliability are critical. Its low RDS(on) ensures minimal power loss during operation.
The FDN306P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 12V and can handle a continuous drain current of 2.6A at a temperature of 25°C. This device features a power dissipation capability of 500mW, making it suitable for compact designs. Packaged in a surface-mounted SOT-23-3 configuration, the FDN306P is ideal for space-constrained applications where performance and reliability are critical. Its low RDS(on) ensures minimal power loss during operation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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