DTC143TET1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A SC75
TRANS PREBIAS NPN 50V 0.1A SC75
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Description
Description
The DTC143TET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC143TET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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