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DTC123EM3T5G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
DTC123EM3T5G is suitable for automotive and consumer electronics applications, particularly in digital circuits where space and component count reduction is critical. Its integrated bias network enhances design efficiency and reliability.
Specification
Specification
TRANS PREBIAS NPN 50V SOT723
TRANS PREBIAS NPN 50V SOT723
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Description
Description
The DTC123EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. The device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC123EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. The device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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