BSS84
Manufacturer
ANBON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
P-CHANNEL ENHANCEMENT MODE MOSFE
P-CHANNEL ENHANCEMENT MODE MOSFE
Detailed specification
Detailed specification
P-Channel 50 V 130mA (Ta) 225mW (Ta) surface-mounted SOT-23
P-Channel 50 V 130mA (Ta) 225mW (Ta) surface-mounted SOT-23
Description
Description
The BSS84 is a P-Channel Enhancement Mode MOSFET designed for energy-efficient applications. It features a maximum Drain-Source Voltage of 50 V, continuous Drain Current of 130 mA, and a power dissipation of 225 mW. The device is housed in a miniature SOT-23 surface mount package, ensuring low on-state resistance (RDS(on)) and high-speed switching capabilities, with ESD protection up to 2 kV.
The BSS84 is a P-Channel Enhancement Mode MOSFET designed for energy-efficient applications. It features a maximum Drain-Source Voltage of 50 V, continuous Drain Current of 130 mA, and a power dissipation of 225 mW. The device is housed in a miniature SOT-23 surface mount package, ensuring low on-state resistance (RDS(on)) and high-speed switching capabilities, with ESD protection up to 2 kV.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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