BS170-D26Z
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 500MA TO92-3
MOSFET N-CH 60V 500MA TO92-3
Detailed specification
Detailed specification
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
Description
Description
The BS170-D26Z is an N-Channel MOSFET designed for applications requiring a maximum drain-source voltage of 60V and a continuous drain current of 500mA. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 830mW at ambient temperature, it is ideal for low-power switching applications. The BS170-D26Z features low on-resistance, ensuring efficient operation in various electronic circuits, including signal amplification and switching applications.
The BS170-D26Z is an N-Channel MOSFET designed for applications requiring a maximum drain-source voltage of 60V and a continuous drain current of 500mA. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 830mW at ambient temperature, it is ideal for low-power switching applications. The BS170-D26Z features low on-resistance, ensuring efficient operation in various electronic circuits, including signal amplification and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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