BS170-D26Z
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed specification
Detailed specification
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
Description
Description
The BS170-D26Z is a small signal N-Channel Field-Effect Transistor (FET) designed for low power applications. It features a maximum drain-source voltage (Vds) of 60 V and can handle a continuous drain current (Id) of 500 mA at a maximum power dissipation of 830 mW (Ta). Packaged in a TO-92-3 through-hole configuration, this transistor is ideal for switching and amplification tasks in various electronic circuits. Its compact size and efficient performance make it suitable for space-constrained designs.
The BS170-D26Z is a small signal N-Channel Field-Effect Transistor (FET) designed for low power applications. It features a maximum drain-source voltage (Vds) of 60 V and can handle a continuous drain current (Id) of 500 mA at a maximum power dissipation of 830 mW (Ta). Packaged in a TO-92-3 through-hole configuration, this transistor is ideal for switching and amplification tasks in various electronic circuits. Its compact size and efficient performance make it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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