BDX33C
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 10A TO220
TRANS NPN DARL 100V 10A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Through Hole TO-220
Description
Description
The BDX33C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 100 V, collector current of 10 A, and total dissipation of 70 W, housed in a TO-220 package.
The BDX33C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 100 V, collector current of 10 A, and total dissipation of 70 W, housed in a TO-220 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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