BDX33C
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 10A TO220AB
TRANS NPN DARL 100V 10A TO220AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Through Hole TO-220AB
Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Through Hole TO-220AB
Description
Description
The BDX33C from onsemi is a high-performance NPN Darlington transistor designed for applications requiring high current and voltage handling. This bipolar junction transistor (BJT) features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 70 W. Packaged in a TO-220AB form factor, it is suitable for through-hole mounting, making it ideal for power amplification and switching applications in various electronic circuits.
The BDX33C from onsemi is a high-performance NPN Darlington transistor designed for applications requiring high current and voltage handling. This bipolar junction transistor (BJT) features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 70 W. Packaged in a TO-220AB form factor, it is suitable for through-hole mounting, making it ideal for power amplification and switching applications in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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