BD681
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 4A SOT32-3
TRANS NPN DARL 100V 4A SOT32-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole SOT-32-3
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole SOT-32-3
Description
Description
The BD681 is a NPN Darlington transistor designed for high-performance applications. It features a collector-emitter voltage of 100 V, a collector current of 4 A, and a total power dissipation of 40 W. The device is housed in a SOT-32-3 package and integrates an antiparallel collector-emitter diode, ensuring reliable operation in both linear and switching applications.
The BD681 is a NPN Darlington transistor designed for high-performance applications. It features a collector-emitter voltage of 100 V, a collector current of 4 A, and a total power dissipation of 40 W. The device is housed in a SOT-32-3 package and integrates an antiparallel collector-emitter diode, ensuring reliable operation in both linear and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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