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BD681

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
BD681 is utilized in industrial and consumer electronics applications, particularly as an output device in complementary general-purpose amplifier circuits. Its robust specifications make it ideal for medium-power amplification tasks, ensuring reliable performance in various electronic systems.
Specification
Specification
TRANS NPN DARL 100V 4A TO126
TRANS NPN DARL 100V 4A TO126
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126
Description
Description
The BD681 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 100 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
The BD681 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 100 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
BD681 is also available from the following manufacturers
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