BD13910S
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1.5A TO126-3
TRANS NPN 80V 1.5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3
Description
Description
The BD13910S is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 1.5A, making it suitable for medium power switching and amplification tasks. The transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. With a power dissipation capability of 1.25W, it is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
The BD13910S is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 1.5A, making it suitable for medium power switching and amplification tasks. The transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. With a power dissipation capability of 1.25W, it is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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