BD13910S
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
POWER BIPOLAR TRANSISTOR, 1.5A,
POWER BIPOLAR TRANSISTOR, 1.5A,
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3
Description
Description
The BD13910S is a power bipolar transistor designed for high-performance applications. This NPN transistor features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.25 W, it is housed in a TO-126-3 package, allowing for efficient thermal management. Its through-hole mounting style ensures ease of integration into circuit boards, making it ideal for both prototyping and production environments.
The BD13910S is a power bipolar transistor designed for high-performance applications. This NPN transistor features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.25 W, it is housed in a TO-126-3 package, allowing for efficient thermal management. Its through-hole mounting style ensures ease of integration into circuit boards, making it ideal for both prototyping and production environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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