BCV26,235
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA BCV26 - SMALL SIGNA
NOW NEXPERIA BCV26 - SMALL SIGNA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP - Darlington 30 V (1.18 in) 500 mA (0.02 in) 220MHz 250 mW (0.01 in) surface-mounted SOT-23
Bipolar (BJT) Transistor PNP - Darlington 30 V (1.18 in) 500 mA (0.02 in) 220MHz 250 mW (0.01 in) surface-mounted SOT-23
Description
Description
The NXP USA Inc. BCV26 is a small signal PNP Darlington transistor designed for high-performance applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 500 mA. With a transition frequency of 220 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for use in signal amplification and switching applications. Packaged in a compact SOT-23 form factor, the BCV26 is suitable for space-constrained designs, ensuring efficient thermal management and reliable performance.
The NXP USA Inc. BCV26 is a small signal PNP Darlington transistor designed for high-performance applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 500 mA. With a transition frequency of 220 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for use in signal amplification and switching applications. Packaged in a compact SOT-23 form factor, the BCV26 is suitable for space-constrained designs, ensuring efficient thermal management and reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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