BC858B,215
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BC858B - SMALL SIGNAL B
NEXPERIA BC858B - SMALL SIGNAL B
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW surface-mounted TO-236AB
Description
Description
The NEXPERIA BC858B is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a TO-236AB package, making it suitable for compact circuit designs. Its small size and high-frequency capabilities make it ideal for various electronic applications, including amplification and switching.
The NEXPERIA BC858B is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a TO-236AB package, making it suitable for compact circuit designs. Its small size and high-frequency capabilities make it ideal for various electronic applications, including amplification and switching.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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