BC858B,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 30V 0.1A TO236AB
TRANS PNP 30V 0.1A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Description
Description
The BC858B is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 30 V and a collector current of 100 mA, with a transition frequency of 100 MHz. Packaged in a TO-236AB surface mount configuration, it offers low power dissipation of 250 mW, making it suitable for compact electronic designs.
The BC858B is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 30 V and a collector current of 100 mA, with a transition frequency of 100 MHz. Packaged in a TO-236AB surface mount configuration, it offers low power dissipation of 250 mW, making it suitable for compact electronic designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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