A3V07H600-42NR6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 48V OM1230-6
RF MOSFET LDMOS 48V OM1230-6
Detailed specification
Detailed specification
RF Mosfet 48 V 900 mA 616MHz ~ 870MHz 16.9dB 112W OM-1230-6L
RF Mosfet 48 V 900 mA 616MHz ~ 870MHz 16.9dB 112W OM-1230-6L
Description
Description
The A3V07H600-42NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 112W, covering a frequency range of 616 to 870 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 16.9 dB and drain efficiency of 51.3% at 742 MHz. It is optimized for digital predistortion systems, ensuring robust operation in demanding environments.
The A3V07H600-42NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 112W, covering a frequency range of 616 to 870 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 16.9 dB and drain efficiency of 51.3% at 742 MHz. It is optimized for digital predistortion systems, ensuring robust operation in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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