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A2V09H400-04NR3

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A2V09H400-04NR3 is utilized in cellular base station applications, particularly in RF power amplification for W-CDMA systems. Its specifications make it suitable for high-efficiency power amplification in telecommunications, ensuring robust performance in mobile communication networks.
Specification
Specification
RF MOSFET LDMOS 48V OM780-4
RF MOSFET LDMOS 48V OM780-4
Detailed specification
Detailed specification
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
Description
Description
The A2V09H400-04NR3 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a typical output power of 107W, covering a frequency range of 720 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 17.9 dB and drain efficiency of 55.8%. It is optimized for digital predistortion systems, ensuring reliable operation in demanding environments.
The A2V09H400-04NR3 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a typical output power of 107W, covering a frequency range of 720 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 17.9 dB and drain efficiency of 55.8%. It is optimized for digital predistortion systems, ensuring reliable operation in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
A2V09H400-04NR3 is also available from the following manufacturers
NXP
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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