A2V09H400-04NR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 48V OM780-4
RF MOSFET LDMOS 48V OM780-4
Detailed specification
Detailed specification
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
Description
Description
The A2V09H400-04NR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at 48V, it delivers a maximum drain current of 688 mA and operates efficiently within the frequency range of 720 MHz to 960 MHz. With a power gain of 17.9 dB and a maximum output power of 107W, this device is ideal for RF amplification in various communication systems. Its robust design ensures reliability in demanding environments, making it suitable for both commercial and industrial applications.
The A2V09H400-04NR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at 48V, it delivers a maximum drain current of 688 mA and operates efficiently within the frequency range of 720 MHz to 960 MHz. With a power gain of 17.9 dB and a maximum output power of 107W, this device is ideal for RF amplification in various communication systems. Its robust design ensures reliability in demanding environments, making it suitable for both commercial and industrial applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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