A2T27S020GNR1
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 28V TO270-2
RF MOSFET LDMOS 28V TO270-2
Detailed specification
Detailed specification
RF Mosfet 28 V 185 mA 400MHz ~ 2.7GHz 21dB 20W TO-270-2 GULL
RF Mosfet 28 V 185 mA 400MHz ~ 2.7GHz 21dB 20W TO-270-2 GULL
Description
Description
The A2T27S020GNR1 is an RF power LDMOS transistor designed for cellular base station applications, operating at 28V with a typical output power of 2.5W across a frequency range of 400 MHz to 2.7 GHz. It features a power gain of 21 dB and is optimized for digital predistortion systems.
The A2T27S020GNR1 is an RF power LDMOS transistor designed for cellular base station applications, operating at 28V with a typical output power of 2.5W across a frequency range of 400 MHz to 2.7 GHz. It features a power gain of 21 dB and is optimized for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C