A2G35S160-01SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET GAN 48V NI400
RF MOSFET GAN 48V NI400
Detailed specification
Detailed specification
RF Mosfet 48 V 190 mA 3.4GHz ~ 3.6GHz 15.7dB 51dBm NI-400S-2S
RF Mosfet 48 V 190 mA 3.4GHz ~ 3.6GHz 15.7dB 51dBm NI-400S-2S
Description
Description
The A2G35S160-01SR3 is a 32 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 3400 to 3600 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance with a typical power gain of 15.7 dB and drain efficiency of 36.7%. The device operates at a VDD of 48 Vdc and IDQ of 190 mA.
The A2G35S160-01SR3 is a 32 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 3400 to 3600 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance with a typical power gain of 15.7 dB and drain efficiency of 36.7%. The device operates at a VDD of 48 Vdc and IDQ of 190 mA.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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