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50C02SS-TL-E

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
50C02SS-TL-E is utilized in low-frequency amplifiers, high-speed switching applications, and small motor drives. Its compact design and high current capacity make it ideal for consumer electronics and telecommunications, where space and performance are critical.
Specification
Specification
TRANS NPN 50V 0.4A 3SSFP
TRANS NPN 50V 0.4A 3SSFP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 400 mA 500 MHz 200 mW surface-mounted 3-SSFP
Bipolar (BJT) Transistor NPN 50 V 400 mA 500 MHz 200 mW surface-mounted 3-SSFP
Description
Description
The 50C02SS-TL-E is a Bipolar NPN Transistor designed for applications requiring low-frequency amplification and high-speed switching. It operates at a collector-emitter voltage of 50V and a collector current of 400mA, with a gain-bandwidth product of 500MHz. The device features low collector-to-emitter saturation voltage (RCE(sat) typ=175mΩ) and is housed in a compact 3-SSFP package, making it suitable for miniaturized electronic designs.
The 50C02SS-TL-E is a Bipolar NPN Transistor designed for applications requiring low-frequency amplification and high-speed switching. It operates at a collector-emitter voltage of 50V and a collector current of 400mA, with a gain-bandwidth product of 500MHz. The device features low collector-to-emitter saturation voltage (RCE(sat) typ=175mΩ) and is housed in a compact 3-SSFP package, making it suitable for miniaturized electronic designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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