2SC2873-Y(TE12L,ZC
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
PB-F POWER TRANSISTOR PW-MINI MO
PB-F POWER TRANSISTOR PW-MINI MO
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 2 A 120 MHz 500 mW surface-mounted PW-MINI
Bipolar (BJT) Transistor NPN 50 V 2 A 120 MHz 500 mW surface-mounted PW-MINI
Description
Description
The 2SC2873-Y is a silicon NPN epitaxial bipolar transistor designed for power amplifier and switching applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 2 A, and a transition frequency of 120 MHz. The device has a low saturation voltage of 0.5 V (max) at 1 A and a power dissipation of 500 mW in a compact PW-MINI surface mount package, making it suitable for high-speed applications.
The 2SC2873-Y is a silicon NPN epitaxial bipolar transistor designed for power amplifier and switching applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 2 A, and a transition frequency of 120 MHz. The device has a low saturation voltage of 0.5 V (max) at 1 A and a power dissipation of 500 mW in a compact PW-MINI surface mount package, making it suitable for high-speed applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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